The 640859-MJ11013 is a single bipolar transistor from Solid State Inc.
- Power: 200W
- Collector-Emitter Breakdown Voltage: 90V
- Collector Current: 30A
- Vce Saturation: 4V @ 300mA, 30A
- DC Current Gain: 1000 @ 20A, 5V
- Operating Temperature: -65°C to 200°C (TJ)
- ECCN: EAR99
- HTSUS Code: 8541.10.0080
It belongs to the category of discrete semiconductor products - transistors - bipolar (BJT) - single bipolar transistors. The package type is bulk and it comes in a standard package of 10 pieces. It has a maximum power of 200W and a maximum collector-emitter breakdown voltage of 90V. The maximum collector current is 30A. This transistor is of PNP - Darlington type and has a Vce saturation of 4V @ 300mA, 30A. The DC current gain is 1000 @ 20A, 5V. It is suitable for through-hole mounting and the package/case is TO-204AA, TO-3. The supplier device package is TO-3. The temperature range for operating is -65°C to 200°C (TJ). The ECCN for this product is EAR99. It is not affected by REACH regulations and the HTSUS code is 8541.10.0080. This product is currently active and offers reliable switching capabilities for electronic devices.
