The B60NH02L is a state-of-the-art N-channel 60V, 2 mOhm typ., 80A STripFET™ H6 series Power MOSFET, designed and manufactured by STMicroelectronics, a global semiconductor leader. This product is engineered to deliver high efficiency and reliability for a wide range of applications, including but not limited to, power supplies, motor control, automotive applications, and high-performance computing.

Key Features

• Low On-Resistance: The B60NH02L boasts an extremely low on-resistance of 2 mOhm typical, which allows for higher efficiency in power conversion and reduces energy losses during operation.
• High Current Capability: With a continuous current rating of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
• 60V Maximum Voltage: The device can support applications with a maximum voltage requirement of up to 60 volts, providing a versatile range of use cases.
• STripFET™ H6 Series Technology: Utilizing the latest generation of ST's proprietary STripFET technology, the B60NH02L offers improved switching performance, reduced gate charge, and lower power dissipation.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness under harsh conditions.

Applications

The B60NH02L's high efficiency and power handling capabilities make it an excellent choice for a variety of applications, including:

• DC/DC converters and VRMs (Voltage Regulator Modules)
• Brushed and brushless motor control circuits
• Automotive applications such as electric power steering and DC motor drives
• High-performance computing and server power supplies

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The B60NH02L is produced in compliance with various environmental standards, including RoHS and REACH. Furthermore, it is encapsulated in a highly efficient and thermally enhanced PowerFLAT 5x6 package, which not only minimizes its footprint but also aids in thermal management.