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BD139-10

Part No BD139-10
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1.5A SOT32
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr STMicroelectronics
Package Tube
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V
Power - Max 1.25 W
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package SOT-32
Base Product Number BD139
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 569847-BD139-10
Ultra Librarian 3D Model Ultra Librarian BD139-10 CAD Model

Description

STMicroelectronics BD139-10 NPN Silicon Transistors

The BD139-10, manufactured by STMicroelectronics, is a versatile NPN bipolar junction transistor (BJT) known for its high performance in a wide range of electronic applications. This device is designed to cater to the demands of various circuits, making it a preferred choice for designers and engineers in the electronics industry.

With its capability to handle a collector current up to 1.5 A and a collector-emitter voltage of 80 V, the BD139-10 stands out as a reliable component for power switching and amplification tasks. Its power dissipation of 12.5 W at 25°C ensures that it can manage a significant amount of power without succumbing to thermal stress, thereby maintaining stability and longevity in your electronic designs.

The BD139-10 features a DC current gain (hFE) range of 63 to 160, which indicates its efficiency in amplifying a signal when used in linear applications. This characteristic makes it an excellent choice for audio amplifiers, signal processing, and driver stages in power amplifiers. Moreover, the device is housed in a TO-126 package, which provides a compact footprint while allowing for adequate heat dissipation.

STMicroelectronics ensures that the BD139-10 meets stringent quality standards, resulting in a transistor that offers both reliability and performance. Its complementary PNP partner, the BD140-10, allows for the creation of push-pull configurations, further expanding its utility in various circuit topologies.

Whether you're designing consumer electronics, power management circuits, or exploring DIY projects, the BD139-10 is a component that promises to deliver the results you need. Its robustness, coupled with STMicroelectronics' reputation for quality semiconductor products, makes this NPN transistor a smart addition to your electronic components inventory.

For detailed specifications and application notes, it's recommended to consult the datasheet provided by STMicroelectronics, which offers comprehensive information to ensure optimal usage of the BD139-10 in your projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2331 $50.1165
525+ $0.1912 $100.3800
810+ $0.1853 $150.0930
1,120+ $0.1793 $200.8160
1,445+ $0.1733 $250.4185
1,935+ $0.1554 $300.6990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,620 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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