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BD139

Part No BD139
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1.5A SOT-32 / Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Standard Package 50
Category Discrete Semiconductor Products
Family Transistors (BJT) - Single
Packaging Tube
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib Ic 500mV @ 50mA 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce 40 @ 150mA 2V
Power - Max 1.25W
Mounting Style Through Hole
Package TO-225AA TO-126-3
Manufacturer Device Package SOT-32-3
Catalog NPN Transistors
Win Source Part Number 094951-BD139
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name BD139
Introduction Date May 31, 1999
ECCN EAR99
Country of Origin China, India, Morocco, Taiwan
Halogen Free Not Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BD139 CAD Model

Description

The BD139, crafted by the renowned semiconductor manufacturer STMicroelectronics, is a versatile NPN bipolar junction transistor (BJT) that is widely employed in various electronic applications. This device is known for its high efficiency and reliability, making it an ideal choice for designers and engineers looking to develop robust electronic circuits.

Constructed with silicon epitaxial planar technology, the BD139 exhibits excellent power handling characteristics. It is capable of withstanding a collector-emitter voltage (VCEO) of up to 80 volts and can manage collector currents up to 1.5 amperes, making it suitable for moderate power switching and amplification tasks. The power dissipation of the BD139 is rated at 12.5 watts, which is substantial for its size, enabling it to handle a fair amount of power without overheating.

One of the key features of the BD139 transistor is its low saturation voltage, which enhances its efficiency in switching applications. This characteristic ensures that the transistor can switch on and off rapidly, minimizing energy loss and improving overall circuit performance. Additionally, the BD139 has a high current gain bandwidth product (fT), typically around 190 MHz, which means it can be used effectively in high-frequency driver stages and audio amplifiers.

STMicroelectronics has designed the BD139 with a TO-126 package, which is a compact, through-hole package that is easy to mount on a printed circuit board (PCB). The robust construction of the TO-126 package provides good thermal performance and ensures a reliable mechanical connection.

The BD139 is also characterized by its versatility, being suitable for a wide range of applications including linear and switching operations. Common uses of this transistor include driver stages in hi-fi amplifiers, signal processing circuits, and power regulators. Its robustness also makes it a preferred choice for commercial, industrial, and educational environments where durability and consistent performance are required.

Overall, the BD139 NPN transistor by STMicroelectronics is a high-quality component that combines efficiency, power handling, and versatility, making it an essential part of the electronic components industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1790 $50.1200
685+ $0.1469 $100.6265
1,055+ $0.1423 $150.1265
1,455+ $0.1377 $200.3535
1,880+ $0.1331 $250.2280
2,515+ $0.1194 $300.2910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 70,000 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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