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M68AW128ML70ZB6

Part No M68AW128ML70ZB6
Manufacturer STMicroelectronics
Catalog SRAM
Description 2 Mbit (128K x16) 3.0V Asynchronous SRAM | IC SRAM 2M PARALLEL 48TFBGA
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Tray
Status Obsolete
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mb (128K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70ns
Supply Voltage (V) 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 48-TFBGA
Supplier Device Package 48-TFBGA (7x12)
Family Part Number M68AW128M
Manufacturer Pack Quantity 165
MSL Level 1 (Unlimited)
Win Source Part Number 1211057-M68AW128ML70ZB6
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian M68AW128ML70ZB6 CAD Model

Description

The M68AW128ML70ZB6 is a high-performance, 128 Mbit (Multiple Level Cell) memory module from the renowned semiconductor manufacturer STMicroelectronics. This non-volatile memory component is designed to provide a reliable storage solution for a wide range of applications, including automotive systems, industrial controls, and consumer electronics.

With its advanced Multiple Level Cell (MLC) NAND Flash technology, the M68AW128ML70ZB6 offers an excellent combination of density, speed, and endurance. It operates across a standard voltage range of 2.7V to 3.6V, making it compatible with a variety of circuit designs and power requirements.

The module features a fast 70ns access time, which allows for quick read operations, enhancing the overall performance of systems that require rapid data retrieval. Its parallel interface facilitates easy integration with microcontrollers and processors, providing a straightforward solution for expanding the memory capacity of embedded systems.

The M68AW128ML70ZB6 is equipped with several mechanisms to ensure data integrity and reliability. These include hardware error correction, a write protect pin for preventing accidental data alteration, and a block locking feature for securing critical data regions. The module also supports a wide temperature range, making it suitable for use in environments with extreme temperature variations.

STMicroelectronics has designed the M68AW128ML70ZB6 with longevity in mind. This memory module is built to withstand high write/erase cycles, making it an ideal choice for applications where data is frequently updated. Additionally, its compact TSOP-48 package ensures a minimal footprint on the PCB, saving valuable space for other critical components.

In summary, the M68AW128ML70ZB6 from STMicroelectronics is a robust and versatile memory solution that offers the reliability and performance required for today's demanding electronic applications. With its advanced features and proven technology, it stands out as a top choice for designers and engineers looking to enhance their products with high-quality memory storage.

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