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NAND01GW3B2AN6E

Part No NAND01GW3B2AN6E
Manufacturer STMicroelectronics
Catalog Flash
Description IC FLASH 1GBIT 50NS 48TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Tray
Status Obsolete(EOL)
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gb (128M x 8)
Access Time 30ns
Supply Voltage - Operating 2.7 V to 3.6 V
Temperature Range - Operating -40°C to 85°C (TA)
Mounting SMD (SMT)
Case / Package 48-TSOP
Win Source Part Number 145279-NAND01GW3B2AN6E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NAND01GW3B2AN6E CAD Model

Description

STMicroelectronics NAND01GW3B2AN6E NAND Flash Memory

The NAND01GW3B2AN6E is a high-performance NAND Flash memory device from STMicroelectronics, designed to meet the growing demands of the digital storage market. This particular model is a part of the large family of NAND Flash memory products that STMicroelectronics offers, providing reliable data storage for a wide range of applications including digital cameras, MP3 players, smartphones, and other digital devices where high-density, non-volatile storage is required.

With a storage capacity of 1 Gbit, the NAND01GW3B2AN6E offers ample space for firmware, boot code, and data storage. The device operates on a supply voltage ranging from 2.7V to 3.6V, making it suitable for various electronic applications that require low power consumption without compromising on performance. The memory is organized into blocks, which can be easily managed and manipulated for efficient data storage and retrieval.

The NAND01GW3B2AN6E features an asynchronous I/O interface for straightforward integration with a host system. This interface is conducive to easy implementation and is compatible with most existing controllers, ensuring that the device can be incorporated into a wide array of designs with minimal hassle. The memory also supports fast page read and write operations, which are essential for applications that demand quick data access and high throughput.

STMicroelectronics has equipped the NAND01GW3B2AN6E with advanced features such as bad block management and wear-leveling algorithms. These features enhance the reliability and lifespan of the memory by ensuring that data is evenly distributed across the memory cells, and by isolating any defective blocks to prevent data loss or corruption.

For designers and engineers looking for a robust and dependable storage solution, the NAND01GW3B2AN6E from STMicroelectronics offers a compelling blend of capacity, performance, and reliability. Its adherence to industry standards for NAND Flash memory ensures compatibility and ease of integration into existing and new systems alike. With its combination of features, the NAND01GW3B2AN6E is an excellent choice for a variety of electronic devices that require high-quality, non-volatile memory storage.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $35.0731 $70.1462
4+ $28.7779 $115.1116
6+ $27.8786 $167.2716
8+ $26.9793 $215.8344
10+ $26.0800 $260.8000
13+ $23.3821 $303.9673
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Availability: 756 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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