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STB100N10F7

Part No STB100N10F7
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 | MOSFET N-CH 100V 80A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 80A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 61nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4369pF at 50V
Power Dissipation (Maximum) 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Family Part Number STB100N10
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260572-STB100N10F7
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB100N10F7 CAD Model

Description

STB100N10F7 - STMicroelectronics N-Channel MOSFET

The STB100N10F7 is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver efficiency and power in a wide range of applications. This MOSFET is part of STMicroelectronics' STripFET™ F7 series, which is known for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power management tasks.

With a drain-to-source voltage (V<sub>DS) of 100V, the STB100N10F7 is well-suited for high-voltage applications. It can handle continuous drain currents (I<sub>D) up to 80A, making it robust enough to support demanding power requirements. Its threshold voltage (V<sub>GS(th)) is also optimized for a wide range of gate drive voltages, further enhancing its versatility.

One of the key features of the STB100N10F7 is its ultra-low on-resistance (R<sub>DS(on)), which stands at just 9.3 mΩ at V<sub>GS = 10 V. This low on-resistance minimizes conduction losses and improves overall efficiency, which is critical for energy-sensitive designs. Additionally, the device boasts an excellent figure of merit (FOM), which is a testament to its superior switching performance and energy efficiency.

The STB100N10F7 comes in a D2PAK package, which is known for its high power density and excellent thermal performance. This package ensures that the MOSFET can handle high-temperature operations while maintaining its performance integrity. Its lead-free design and compliance with RoHS regulations also make it an environmentally friendly choice for manufacturers looking to create sustainable products.

Applications for the STB100N10F7 are broad and include switch-mode power supplies (SMPS), high-efficiency DC-DC converters, motor control circuits, and power management systems in computing and telecom infrastructure. Its reliability and performance make it an ideal component for designers looking to optimize their power circuits for both performance and size.

In summary, the STB100N10F7 from STMicroelectronics is a powerful and efficient solution for modern power management challenges. Its low on-resistance, high current capability, and robust thermal performance make it a top choice for engineers and designers across various industries.

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Quantity Unit Price Ext. Price
19+ $2.7688 $52.6072
45+ $2.2719 $102.2355
69+ $2.2009 $151.8621
94+ $2.1299 $200.2106
122+ $2.0589 $251.1858
163+ $1.8459 $300.8817
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