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STB100NH02LT4

Part No STB100NH02LT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 60A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 2850pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066269-STB100NH02LT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB100NH02LT4 CAD Model

Description

STB100NH02LT4 - N-Channel 24V - 0.0028 Ohm - 80A - D2PAK STripFET™ II Power MOSFET

The STB100NH02LT4 is a high-performance N-Channel Power MOSFET from the renowned semiconductor manufacturer STMicroelectronics. This device is part of the STripFET™ II series, which is known for its low on-state resistance and high switching performance. The STB100NH02LT4 is designed to deliver efficient power management and is suitable for a wide range of applications, including DC-DC converters, motor control, and general-purpose power switching.

This MOSFET boasts an impressive 24V drain-source voltage (Vds) and a very low on-resistance of just 0.0028 ohms, allowing for higher current handling capabilities with reduced conduction losses. With a continuous drain current (Id) of 80A, the STB100NH02LT4 can handle high current loads, making it an excellent choice for power-intensive applications.

The device is housed in the D2PAK package, which is known for its robustness and ability to dissipate heat effectively. This ensures reliable operation even under high power and temperature conditions. The STB100NH02LT4 is also characterized by its low gate charge (Qg), which enhances its switching performance, thereby reducing switching losses and improving overall efficiency.

Key features of the STB100NH02LT4 include:

  • Low threshold drive
  • Very low on-resistance Rds(on) at 0.0028 ohms
  • High drain current (Id) of 80A
  • Low gate charge (Qg)
  • 100% avalanche tested
  • High dv/dt capability

With its exceptional electrical characteristics, the STB100NH02LT4 is ideally suited for high-efficiency power management tasks. Its robust design and high reliability make it a preferred choice for engineers and designers looking to optimize the performance of their electronic systems. STMicroelectronics' commitment to quality ensures that the STB100NH02LT4 meets the stringent requirements of modern electronic applications.

Whether you are designing power supplies, inverters, or any application requiring efficient power handling and switching, the STB100NH02LT4 offers a solution that combines performance with reliability, backed by STMicroelectronics' industry-leading expertise.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2827 $59.3502
62+ $1.8731 $116.1322
96+ $1.8145 $174.1920
132+ $1.7561 $231.8052
171+ $1.6975 $290.2725
228+ $1.5218 $346.9704
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 19,300 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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