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STB12NK80ZT4

Part No STB12NK80ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 10.5A D2PAK / Trans MOSFET N-CH 800V 10.5A 3-Pin(2+Tab) D2PAK T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SuperMESH
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2620pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 190W (Tc)
Rds On (Maximum) @ Id, Vgs 750 mOhm @ 5.25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 795590-STB12NK80ZT4
Popularity Medium
Supply and Demand Status Limited
Family Name STB12NK80
Introduction Date October 01, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STB12NK80ZT4 CAD Model

Description

The STB12NK80ZT4 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed using STMicroelectronics' unique MDmesh™ technology, which combines a vertical structure with a company-specific strip layout to yield one of the industry's lowest on-resistance and gate charge. It is a perfect choice for high-efficiency applications that require a robust and reliable power management solution.

Key Features

  • Advanced MDmesh™ Technology: The STB12NK80ZT4 employs STMicroelectronics' innovative MDmesh technology, ensuring a low on-resistance and high switching efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of up to 800V, this MOSFET can handle high voltage applications with ease.
  • Low Gate Charge (Q<sub>g): The device features a low gate charge, which translates to reduced switching losses, making it suitable for high-frequency power switching applications.
  • Reduced Threshold Voltage (V<sub>GS(th)): The lower threshold voltage ensures that the MOSFET can be driven at lower voltages, enhancing its compatibility with modern microcontrollers and logic-level devices.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under extreme conditions.
  • Zener-Protected: The MOSFET comes with an integrated Zener diode for gate protection, providing an extra layer of security against overvoltage conditions.

Applications

The STB12NK80ZT4 is versatile and can be used in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Motor control applications
  • LED lighting solutions
  • Power management for telecommunication systems

Package and Quality

The STB12NK80ZT4 is available in a D2PAK package, providing a compact footprint for designs where space is at a premium. STMicroelectronics is committed to delivering the highest quality products, and this MOSFET is no exception, meeting stringent industry standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.3026 $58.3286
24+ $4.9606 $119.0544
37+ $4.7896 $177.2152
52+ $4.4474 $231.2648
68+ $4.2764 $290.7952
85+ $4.1053 $348.9505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,085 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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