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STB12NM50FDT4

Part No STB12NM50FDT4
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-CHANNEL500V-0.32ohm-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh™ Power MOSFET with FAST DIODE | MOSFET N-CH 500V 12A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1000pF at 25V
Power Dissipation (Maximum) 160W
Temperature Range - Operating -65°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260593-STB12NM50FDT4
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB12NM50FDT4 CAD Model

Description

The STB12NM50FDT4 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management in a compact form factor.

Key Features

  • Low On-Resistance: The STB12NM50FDT4 boasts an exceptionally low drain-source on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Voltage Tolerance: With a drain-source voltage (V<sub>DSS) rating of 500V, this MOSFET can handle high voltage applications, making it suitable for a wide range of power supply and conversion systems.
  • High Current Capacity: It is capable of supporting a continuous drain current (I<sub>D) of up to 11A, allowing it to drive significant loads without overheating.
  • Fast Switching Speed: The device features a fast switching speed, which is critical for reducing switching losses and improving overall performance in high-frequency applications.
  • Enhanced Durability: The MOSFET is designed with robustness in mind, providing reliable operation even under harsh conditions.
  • Improved Thermal Performance: Thanks to its advanced package design, the STB12NM50FDT4 offers excellent thermal performance, ensuring stability and longevity.

Applications

The versatility of the STB12NM50FDT4 makes it suitable for a broad spectrum of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power converters and inverters
  • Motor control circuits
  • LED lighting solutions
  • High-performance computing systems
  • Automotive and industrial applications

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STB12NM50FDT4 is no exception, undergoing rigorous testing and quality control measures to ensure it meets the stringent standards expected by customers in terms of performance and reliability.

Whether you're designing power supplies, working on motor control, or developing energy-efficient solutions, the STB12NM50FDT4 is an excellent choice for your power MOSFET needs. Its combination of low on-resistance, high voltage and current capacity, fast switching speeds, and thermal efficiency make it a robust and versatile component in any power management design.

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