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STB13NM50N-1

Part No STB13NM50N-1
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh™ Power MOSFET | MOSFET N-CH 500V 12A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 12A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 320mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 960pF at 50V
Power Dissipation (Maximum) 100W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package I2PAK
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260598-STB13NM50N-1
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB13NM50N-1 CAD Model

Description

STB13NM50N-1 - STMicroelectronics N-Channel MOSFET

The STB13NM50N-1 is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, ensuring reliability and performance in your electronic designs.

Key Features

  • High Voltage Capability: The STB13NM50N-1 operates at 500V, making it suitable for high voltage applications.
  • Low On-Resistance: With an RDS(on) value of 0.28 ohms, this MOSFET ensures minimal power loss and heat generation, contributing to the overall efficiency of your circuit.
  • High Current Rating: A continuous drain current of 11A allows for robust performance in demanding situations.
  • Fast Switching Speed: The device is designed for fast switching, enhancing performance in applications such as switching power supplies and motor control.
  • Enhanced Durability: The MOSFET is encapsulated in a TO-220 package, offering robustness and improved thermal dissipation.
  • Zener-Protected: The gate-source is protected with an integrated Zener diode, providing protection against electrostatic discharge and enhancing the device's ruggedness.

Applications

The STB13NM50N-1 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power converters and inverters
  • Motor control circuits
  • High-efficiency DC-DC converters
  • LED lighting solutions

Product Summary

The STB13NM50N-1 N-Channel MOSFET from STMicroelectronics is a powerful component designed for high voltage and high efficiency applications. With its low on-resistance, high current capability, and fast switching speeds, it is an ideal choice for designers looking to improve the performance of their power management systems. The TO-220 package ensures durability and excellent thermal management, while the integrated Zener diode provides gate-source protection, making this MOSFET a reliable and robust choice for your electronic designs.

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