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STB141NF55

Part No STB141NF55
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 142nC @ 10V
Max Input Capacitance 5300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102763-STB141NF55
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB141NF55 CAD Model

Description

The STB141NF55 is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This robust and efficient MOSFET is designed to handle a drain-source voltage (V<sub>DS) of 55V, with a maximum continuous drain current (I<sub>D) of 120A, making it an excellent choice for high-power applications.

Key Features

  • Low On-Resistance: The STB141NF55 features an exceptionally low on-resistance (R<sub>DS(on)), which translates into reduced conduction losses and improved efficiency in your applications.
  • High Current Capability: With the ability to support a continuous drain current of 120A, this MOSFET can handle high current loads, making it ideal for demanding power management tasks.
  • High Switching Performance: The fast switching speed of the STB141NF55 minimizes switching losses and is suitable for high-frequency applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness in applications where the MOSFET may experience high-energy pulses.
  • Low Gate Charge: A low gate charge (Q<sub>g) means that less energy is required to turn the MOSFET on and off, further enhancing the overall efficiency of the device.

Applications

The versatility of the STB141NF55 allows it to be used in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Current DC/DC Converters
  • Motor Control Circuits
  • Automotive and Transportation
  • Power Management Functions

Quality and Environmental Compliance

STMicroelectronics is committed to environmental stewardship and the STB141NF55 is manufactured with this in mind. It complies with various environmental standards, ensuring that it is suitable for use in environmentally sensitive applications.

Overall, the STB141NF55 from STMicroelectronics is an excellent choice for designers looking for a high-performance, reliable, and efficient N-Channel MOSFET. Whether for industrial, automotive, or consumer applications, this MOSFET is designed to deliver top-notch performance and energy efficiency.

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