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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 11A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 340mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 22nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 810pF at 100V
Power Dissipation (Maximum) 85W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260604-STB15N65M5
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB15N65M5 CAD Model

Description

STB15N65M5 - N-channel 650 V, 0.19 Ohm typ., 15 A MDmesh™ M5 Power MOSFET in D2PAK package

The STB15N65M5 from STMicroelectronics is a high-performance N-channel Power MOSFET that is a part of the innovative MDmesh™ M5 series. This Power MOSFET is designed with ST's advanced Planar technology for the most demanding high-efficiency applications. The device comes in a robust and compact D2PAK surface-mount package, which is well-suited for sophisticated power conversion applications where space and power efficiency are critical.

With a drain-source voltage of 650 V, the STB15N65M5 is optimized for a wide range of high-voltage applications, including switch-mode power supplies (SMPS), lighting applications, welding equipment, and solar inverters. It boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.19 Ohm (typical), which significantly reduces conduction losses and improves overall system efficiency.

The device can handle continuous current up to 15 A, making it capable of supporting high current loads while maintaining a high level of performance. The MDmesh™ M5 technology integrates a vertical structure, which ensures a reduced gate charge (Q<sub>g) and lower input capacitance (C<sub>iss), further enhancing the switching performance of the MOSFET.

STB15N65M5 also features a fast recovery diode, which is an essential characteristic for high-speed switching operations. This ensures that the device can switch off quickly, minimizing losses and improving the reliability of the application it is used in.

Furthermore, the device is characterized by an excellent figure of merit (FOM), which is a testament to its ability to provide high efficiency in power conversion applications. The MOSFET is also 100% avalanche tested, ensuring that it can withstand tough conditions without performance degradation.

In summary, the STB15N65M5 Power MOSFET is a high-quality component designed for applications that require high efficiency, reliability, and power density. Its advanced features make it an ideal choice for engineers looking to improve the performance of their power conversion systems.

For detailed specifications and application support, visit the STMicroelectronics website or contact their support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.7244 $65.1960
220+ $0.5951 $130.9220
340+ $0.5757 $195.7380
465+ $0.5575 $259.2375
600+ $0.5394 $323.6400
805+ $0.4838 $389.4590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 38,000 pieces
MOQ: 90 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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