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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V
Power Dissipation (Max) 210W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB35
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16357-6,497-16357-1,497-16357-2
Standard Package 1,000
Win Source Part Number 971190-STB35N60DM2
Ultra Librarian 3D Model Ultra Librarian STB35N60DM2 CAD Model

Description

STB35N60DM2 - N-channel MOSFET by STMicroelectronics

The STB35N60DM2 is a state-of-the-art N-channel MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and thermal performance. The STB35N60DM2 is particularly suitable for high-efficiency applications, including switched-mode power supplies (SMPS), lighting, welding, solar inverters, and any high-performance power conversion systems.

Key Features

  • High Voltage Capability: The STB35N60DM2 is rated for a maximum voltage of 600V, making it ideal for handling high voltage applications with ease.
  • Low On-Resistance: With an R<sub>DS(on) value as low as 0.115 Ω, this MOSFET ensures minimal power loss and improved efficiency during operation.
  • Fast Switching Speed: The device offers a fast switching speed, which is crucial for reducing switching losses and improving the performance of power conversion systems.
  • High Current Capacity: The MOSFET can handle a continuous drain current of up to 35A, making it suitable for applications that require high current capabilities.

Technical Specifications

  • Product Category: Power MOSFET
  • Configuration: Single
  • Drain-Source Breakdown Voltage (V<sub>DS): 600V
  • Continuous Drain Current (I<sub>D): 35A
  • R<sub>DS(on): 0.115 Ω
  • Gate Charge (Q<sub>g): Typical 80 nC
  • Package / Case: D2PAK

Applications

The STB35N60DM2 is designed for a wide range of high-performance applications. Its robust design and high efficiency make it an excellent choice for:

  • Switched-mode power supplies (SMPS)
  • LED lighting applications
  • Power inverters and converters
  • Welding equipment
  • High-performance computing
  • Solar power inverters

With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STB35N60DM2 from STMicroelectronics is engineered to meet the demanding requirements of modern power electronic applications, delivering both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.7875 $69.4500
28+ $4.7487 $132.9636
43+ $4.6002 $197.8086
59+ $4.4518 $262.6562
76+ $4.3035 $327.0660
101+ $3.8583 $389.6883
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 24,195 pieces
MOQ: 12 pcs
Order Increment : 1 piece
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