STB35N60DM2 - N-channel MOSFET by STMicroelectronics
The STB35N60DM2 is a state-of-the-art N-channel MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and thermal performance. The STB35N60DM2 is particularly suitable for high-efficiency applications, including switched-mode power supplies (SMPS), lighting, welding, solar inverters, and any high-performance power conversion systems.
Key Features
- High Voltage Capability: The STB35N60DM2 is rated for a maximum voltage of 600V, making it ideal for handling high voltage applications with ease.
- Low On-Resistance: With an R<sub>DS(on) value as low as 0.115 Ω, this MOSFET ensures minimal power loss and improved efficiency during operation.
- Fast Switching Speed: The device offers a fast switching speed, which is crucial for reducing switching losses and improving the performance of power conversion systems.
- High Current Capacity: The MOSFET can handle a continuous drain current of up to 35A, making it suitable for applications that require high current capabilities.
Technical Specifications
- Product Category: Power MOSFET
- Configuration: Single
- Drain-Source Breakdown Voltage (V<sub>DS): 600V
- Continuous Drain Current (I<sub>D): 35A
- R<sub>DS(on): 0.115 Ω
- Gate Charge (Q<sub>g): Typical 80 nC
- Package / Case: D2PAK
Applications
The STB35N60DM2 is designed for a wide range of high-performance applications. Its robust design and high efficiency make it an excellent choice for:
- Switched-mode power supplies (SMPS)
- LED lighting applications
- Power inverters and converters
- Welding equipment
- High-performance computing
- Solar power inverters
With its combination of high voltage capability, low on-resistance, and fast switching speeds, the STB35N60DM2 from STMicroelectronics is engineered to meet the demanding requirements of modern power electronic applications, delivering both performance and reliability.