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STB45N50DM2AG

Part No STB45N50DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 35A D2PAK  /  N-Channel 500 V 35A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 84mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB45
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16134-6,497-16134-1,497-16134-2
Standard Package 1,000
Win Source Part Number 999016-STB45N50DM2AG
Ultra Librarian 3D Model Ultra Librarian STB45N50DM2AG CAD Model

Description

STB45N50DM2AG - High Performance Power MOSFET from STMicroelectronics

The STB45N50DM2AG is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This device is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and performance in a wide range of applications.

With a drain-source voltage (V<sub>DS) of 500V, the STB45N50DM2AG is well-suited for high voltage applications that require a robust and efficient power management solution. Its maximum continuous drain current (I<sub>D) of 45A, combined with a low on-state resistance (R<sub>DS(on)) of 0.065Ω, ensures high current handling capability with minimal conduction losses, making it ideal for high-performance power conversion systems.

Key Features:

  • High Voltage Capability: With a V<sub>DS of 500V, the STB45N50DM2AG can handle high voltage operations, providing flexibility for a variety of power applications.
  • Low On-Resistance: The low R<sub>DS(on) minimizes conduction losses, which enhances overall efficiency and reduces thermal stress within the system.
  • High Current Rating: A maximum continuous drain current of 45A allows this MOSFET to support applications with high power demands.
  • Fast Switching Speed: The device is designed for fast switching, which is critical for reducing switching losses and improving performance in power converters and inverters.
  • Enhanced Body Diode: The STB45N50DM2AG features an improved body diode that provides faster recovery time and reduced reverse recovery losses.

The STB45N50DM2AG is housed in a TO-247 package, which is known for its excellent thermal performance and mechanical robustness. This package ensures that the MOSFET can operate reliably even under harsh conditions and in applications that require high power density.

Applications for the STB45N50DM2AG include a wide range of power supply systems, such as switched-mode power supplies (SMPS), lighting ballasts, welding equipment, solar inverters, and other energy-efficient solutions that demand high reliability and performance.

With its combination of high voltage capability, low on-resistance, high current rating, and fast switching performance, the STB45N50DM2AG from STMicroelectronics is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.3383 $57.3532
9+ $11.7648 $105.8832
14+ $11.3971 $159.5594
19+ $11.0295 $209.5605
24+ $10.6618 $255.8832
32+ $9.5589 $305.8848
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Availability: 984 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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