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STB6N65M2

Part No STB6N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 4A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Features N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer STMicroelectronics
Series MDmesh™
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK (TO-263)
Family Name STB6N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-15047-6, 497-15047-6, -497-15047-1, -497-15047-2, 497-15047-1, 497-15047-2
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935252-STB6N65M2
Ultra Librarian 3D Model Ultra Librarian STB6N65M2 CAD Model

Description

STB6N65M2 - N-channel 650 V, 1.2 Ω typ., 4.6 A SuperMESH™2 Power MOSFET in D²PAK Package

The STB6N65M2 from STMicroelectronics is a high-performance N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This component is part of STMicroelectronics' SuperMESH™2 family, which is renowned for its excellent RDS(on) area ratio and reduced gate charge, making these MOSFETs a highly efficient option for power management tasks.

Key Features

  • High Voltage Capability: The STB6N65M2 operates at a high voltage of 650V, making it suitable for applications that require high voltage handling capabilities.
  • Low On-Resistance: With a typical on-resistance of just 1.2 Ω, this MOSFET ensures minimal power loss and improves overall efficiency in circuits.
  • High Current Rating: The device is capable of handling continuous currents up to 4.6 A, allowing it to drive significant loads.
  • Reduced Gate Charge: The low gate charge characteristic of the SuperMESH™2 technology leads to reduced switching losses, which is critical for high-frequency applications.
  • Improved dv/dt Capability: This MOSFET is designed to withstand high dv/dt rates, enhancing the reliability of the device under fast-switching conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring robustness and durability in the field.
  • Application Versatility: It is suitable for a variety of applications, including switch-mode power supplies (SMPS), lighting, power factor correction (PFC) circuits, and more.

Package Information

The STB6N65M2 comes in a D²PAK package, which is a surface mount power package capable of accommodating high power dissipation. The D²PAK package allows for efficient thermal management and is well-suited for compact designs where space is at a premium.

Applications

Due to its robust design and electrical characteristics, the STB6N65M2 is ideal for use in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • LED Lighting Applications
  • Motor Control Systems
  • Electronic Ballasts for Fluorescent Lighting

With its combination of high voltage capability, low on-resistance, and high current handling, the STB6N65M2 is a reliable choice for designers looking to optimize performance in power conversion and management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9528 $61.9320
150+ $0.7819 $117.2850
230+ $0.7574 $174.2020
320+ $0.7330 $234.5600
410+ $0.7085 $290.4850
550+ $0.6353 $349.4150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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