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STB8N90K5

Part No STB8N90K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ K5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Vgs (Max) ±30V
Power Dissipation (Max) 130W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB8N90
Other Names 497-17082-6,497-17082-1,497-17082-2
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278092-STB8N90K5
Ultra Librarian 3D Model Ultra Librarian STB8N90K5 CAD Model

Description

STB8N90K5 Power MOSFET by STMicroelectronics

The STB8N90K5 is a robust and efficient N-channel Power MOSFET manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This power MOSFET is designed to deliver high performance in a wide range of applications, making it an ideal choice for designers looking for a balance between efficiency and power handling.

With a drain-source voltage (V<sub>DS) of 900V, the STB8N90K5 is well-suited for high voltage applications. Its on-resistance (R<sub>DS(on)) of 1.7 ohm ensures that power losses are minimized during operation, enhancing overall system efficiency. This makes the STB8N90K5 an excellent choice for power supply units, lighting applications, and other high voltage switching applications.

The device features ST's proprietary MDmesh™ K5 technology, which combines extremely low on-resistance with a high dv/dt capability, providing superior switching performance and reliability. The MOSFET's structure is optimized for reduced gate charge (Q<sub>g), which enables faster switching and reduced switching losses.

The STB8N90K5 also boasts a low threshold voltage (V<sub>th), which allows for ease of drive and high responsiveness in circuits. This characteristic is particularly beneficial in applications where fast switching is critical. Additionally, the device is encapsulated in a TO-220 package, offering excellent thermal performance and making it easy to integrate into various circuit designs.

For safety and reliability, the STB8N90K5 is equipped with an integrated body diode, which provides reverse voltage protection and eliminates the need for external diode components in certain applications. This feature simplifies design and can help reduce overall system cost.

In summary, the STB8N90K5 Power MOSFET from STMicroelectronics is a high-quality, efficient, and reliable component that is well-suited for designers looking to improve the performance of their high voltage power applications. Its advanced technology, combined with its robust package, makes it a versatile choice for a wide range of industrial, consumer, and computing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0788 $54.7092
21+ $4.9878 $104.7438
32+ $4.8319 $154.6208
43+ $4.6760 $201.0680
56+ $4.5202 $253.1312
75+ $4.0526 $303.9450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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