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STD100N03LT4

Part No STD100N03LT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 27nC @ 5V
Max Input Capacitance 2060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102835-STD100N03LT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD100N03LT4 CAD Model

Description

The STD100N03LT4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the industry's leading manufacturers of semiconductor solutions. This device is designed to deliver efficient power conversion with low on-state resistance and high switching performance, making it an ideal choice for a wide range of applications, including power supply, motor control, and automotive systems.

Key Features

  • Drain-source Voltage (VDS): 30V - This feature indicates the maximum voltage that the MOSFET can tolerate across its drain-source terminals without breakdown.
  • Continuous Drain Current (ID): 100A - The STD100N03LT4 can handle a high continuous current, making it suitable for applications requiring robust power handling capabilities.
  • Low On-state Resistance (RDS(on)): This parameter is a measure of the resistance between the drain and source terminals when the MOSFET is in the on-state. A lower RDS(on) results in reduced power losses and improved efficiency.
  • Fast Switching Speed: The device is designed for applications that require fast switching, contributing to improved performance and reduced switching losses.
  • Logic Level Gate Drive: The MOSFET can be driven by logic level voltages, which simplifies the gate drive requirements and is compatible with a wide range of control circuitries.

Applications

The versatility of the STD100N03LT4 allows it to be used in various applications, including:

  • Switching regulators
  • DC-DC converters
  • Motor drivers
  • Automotive applications
  • Power management solutions

Package and Quality

The STD100N03LT4 comes in a surface-mount DPAK package, which is known for its compact footprint and good thermal performance. The device is RoHS compliant and adheres to STMicroelectronics' commitment to environmental sustainability. Furthermore, it meets stringent quality standards, ensuring reliability and performance in demanding conditions.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to consult the official datasheet and product documentation available on the STMicroelectronics website.

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