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STD105N10F7AG

Part No STD105N10F7AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 4369pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102839-STD105N10F7AG
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Alternative Energy, Power Management, Portable Devices, Sensing & Instrumentation
Ultra Librarian 3D Model Ultra Librarian STD105N10F7AG CAD Model

Description

Product Overview: STD105N10F7AG

The STD105N10F7AG is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is a part of ST's STripFET™ VII DeepGATE™ technology, which is renowned for its low on-state resistance and minimal gate charge. The device is designed to deliver high efficiency and reliability in a wide range of applications, including switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and general-purpose power switching.

Key Features

  • Low On-Resistance (RDS(on)): This MOSFET boasts an extremely low on-state resistance of just 9.5 mΩ max, which enhances its efficiency by minimizing conduction losses.
  • High Continuous Drain Current (ID): With a continuous drain current of up to 100 A, the STD105N10F7AG is capable of handling high current loads, making it suitable for demanding applications.
  • High Voltage Capability: It can withstand drain-source voltages of up to 100 V, providing a wide safety margin for voltage spikes and surges commonly found in industrial environments.
  • Low Gate Charge (Qg): The device has a low gate charge, which results in faster switching speeds and reduced switching losses.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
  • Improved dv/dt Capability: The MOSFET's improved dv/dt capability ensures stable operation under rapid voltage changes, contributing to the overall system reliability.

Applications

The STD105N10F7AG MOSFET is versatile and can be used in various electronic designs. It is particularly suited for high-efficiency power management tasks in consumer electronics, automotive systems, telecommunication devices, computing, and industrial equipment. Its superior electrical characteristics also make it an excellent choice for advanced energy conversion systems, such as solar inverters and wind power generators.

Package and Environmental Compliance

Housed in a TO-220 package, the STD105N10F7AG offers a compact form factor while still providing excellent thermal performance. STMicroelectronics is committed to environmental sustainability, and this product is compliant with RoHS (Restriction of Hazardous Substances) and is designed to meet the requirements for environmentally friendly manufacturing.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0642 $52.0914
40+ $2.5143 $100.5720
62+ $2.4357 $151.0134
85+ $2.3571 $200.3535
110+ $2.2786 $250.6460
147+ $2.0428 $300.2916
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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