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STD12N60DM2AG

Part No STD12N60DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE-GRADE N-CHANNEL 600 V
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number 3000001282-STD12N60DM2AG
Manufacturer STMicroelectronics
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs Single FETs, MOSFETs
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tape & Reel (TR) Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Product Status Active
Base Product Number STD12
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Ultra Librarian 3D Model Ultra Librarian STD12N60DM2AG CAD Model

Description

STD12N60DM2AG - STMicroelectronics N-channel MOSFET

The STD12N60DM2AG is a high-performance N-channel MOSFET that comes from the reputable electronics manufacturer STMicroelectronics. This power MOSFET is designed to deliver exceptional efficiency and power density, making it an ideal choice for a wide range of applications, including switch-mode power supplies, motor control systems, and power management solutions.

With a drain-source voltage (V<sub>DS) of 600V, the STD12N60DM2AG is well-suited for high voltage operations. It also boasts a continuous drain current (I<sub>D) of 11A at 25°C, ensuring that it can handle significant current loads without overheating or failing. The device's low on-resistance (R<sub>DS(on)) of 0.65Ω typ. contributes to its high efficiency, as it minimizes conduction losses when the MOSFET is in the ON state.

The STD12N60DM2AG is built using STMicroelectronics' advanced MDmesh™ DM2 technology that combines excellent R<sub>DS(on) with a high level of ruggedness. This technology is particularly beneficial for resonant and soft-switching topologies, where the MOSFET needs to operate efficiently at high frequencies while withstanding the stresses of frequent switching.

This MOSFET also features a fast recovery diode, which is optimized for high-frequency applications and ensures reduced switching losses. The device's gate charge (Q<sub>g) is optimized for ease of driving and smooth switching performance, which is critical for reducing electromagnetic interference (EMI) and improving the reliability of the overall system.

The STD12N60DM2AG comes in a TO-220FP package, which is widely used and recognized for its good thermal performance and ease of mounting on a printed circuit board (PCB). This package makes the MOSFET robust and capable of withstanding mechanical stress during assembly and operation.

With these features, the STD12N60DM2AG from STMicroelectronics is an excellent choice for designers seeking a reliable and efficient N-channel MOSFET that can meet the demands of high-voltage and high-power applications while maintaining energy efficiency and thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2496 $51.7408
55+ $1.8458 $101.5190
84+ $1.7881 $150.2004
116+ $1.7305 $200.7380
150+ $1.6728 $250.9200
201+ $1.4997 $301.4397
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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