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STD13N60DM2

Part No STD13N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A DPAK / N-Channel 600 V 11A (Tc) 110W (Tc) Surface Mount DPAK
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16926-1,497-16926-2,497-16926-6
Standard Package 2,500
Win Source Part Number 974673-STD13N60DM2
Ultra Librarian 3D Model Ultra Librarian STD13N60DM2 CAD Model

Description

STD13N60DM2 - N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK Package

The STD13N60DM2 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, which is a leading name in semiconductor solutions. This device is part of the MDmesh™ DM2 series, which is renowned for its excellent efficiency and performance in high-voltage applications. The STD13N60DM2 is designed to meet the rigorous demands of power electronics, making it an ideal choice for a wide range of applications, including switch-mode power supplies, lighting, welding, and high-performance drives.

The MOSFET operates at a drain-source voltage (VDS) of 600 V, which provides ample headroom for high-voltage applications. Its low on-resistance (RDS(on)) of just 0.35 Ω typ. ensures high efficiency and reduced power losses during operation. With a continuous drain current (ID) of 11 A, the STD13N60DM2 can handle significant power without overheating, thanks to its excellent thermal characteristics.

One of the key features of this device is the MDmesh™ DM2 technology, which combines a vertical structure with a new proprietary diffusion process. This results in lower on-resistance, reduced gate charge (Qg), and better diode recovery performance compared to traditional MOSFETs. These enhancements make the STD13N60DM2 a superior choice for high-efficiency power conversion.

The STD13N60DM2 is housed in a robust and compact DPAK package, which is not only space-efficient but also provides excellent thermal performance. The package is designed to facilitate easy mounting on a printed circuit board (PCB) and is compatible with standard surface-mount technology (SMT), simplifying the manufacturing process.

With its exceptional electrical characteristics and reliability, the STD13N60DM2 is a testament to STMicroelectronics' commitment to providing innovative and high-performance power solutions. Whether for industrial, consumer, or computing applications, this Power MOSFET is engineered to deliver top-notch performance where it matters most.

For detailed technical specifications, application guides, and support resources, customers can visit the STMicroelectronics website or contact their local sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8032 $52.2080
155+ $0.6591 $102.1605
235+ $0.6385 $150.0475
325+ $0.6179 $200.8175
420+ $0.5973 $250.8660
565+ $0.5355 $302.5575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,750 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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