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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD13
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16926-1,497-16926-2,497-16926-6
Standard Package 2,500
Win Source Part Number 974673-STD13N60DM2
Ultra Librarian 3D Model Ultra Librarian STD13N60DM2 CAD Model

Description

STD13N60DM2 - N-channel 600 V, 0.35 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK Package

The STD13N60DM2 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, which is a leading name in semiconductor solutions. This device is part of the MDmesh™ DM2 series, which is renowned for its excellent efficiency and performance in high-voltage applications. The STD13N60DM2 is designed to meet the rigorous demands of power electronics, making it an ideal choice for a wide range of applications, including switch-mode power supplies, lighting, welding, and high-performance drives.

The MOSFET operates at a drain-source voltage (V<sub>DS) of 600 V, which provides ample headroom for high-voltage applications. Its low on-resistance (R<sub>DS(on)) of just 0.35 Ω typ. ensures high efficiency and reduced power losses during operation. With a continuous drain current (I<sub>D) of 11 A, the STD13N60DM2 can handle significant power without overheating, thanks to its excellent thermal characteristics.

One of the key features of this device is the MDmesh™ DM2 technology, which combines a vertical structure with a new proprietary diffusion process. This results in lower on-resistance, reduced gate charge (Q<sub>g), and better diode recovery performance compared to traditional MOSFETs. These enhancements make the STD13N60DM2 a superior choice for high-efficiency power conversion.

The STD13N60DM2 is housed in a robust and compact DPAK package, which is not only space-efficient but also provides excellent thermal performance. The package is designed to facilitate easy mounting on a printed circuit board (PCB) and is compatible with standard surface-mount technology (SMT), simplifying the manufacturing process.

With its exceptional electrical characteristics and reliability, the STD13N60DM2 is a testament to STMicroelectronics' commitment to providing innovative and high-performance power solutions. Whether for industrial, consumer, or computing applications, this Power MOSFET is engineered to deliver top-notch performance where it matters most.

For detailed technical specifications, application guides, and support resources, customers can visit the STMicroelectronics website or contact their local sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9541 $52.4755
130+ $0.7828 $101.7640
200+ $0.7584 $151.6800
275+ $0.7339 $201.8225
355+ $0.7095 $251.8725
475+ $0.6361 $302.1475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 49,750 pieces
MOQ: 55 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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