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STD18N60M6

Part No STD18N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD18
Other Names STD18N60M6,497-STD18N60M6DKR,497-STD18N60M6CT,497-STD18N60M6TR
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278057-STD18N60M6
Ultra Librarian 3D Model Ultra Librarian STD18N60M6 CAD Model

Description

Product Overview: STD18N60M6 - STMicroelectronics

The STD18N60M6 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its advanced and integrated technologies. This MOSFET is part of STMicroelectronics' MDmesh™ M6 series, which features an innovative proprietary vertical structure. The device is designed to achieve extremely low on-resistance and high dv/dt capability, making it suitable for a wide range of power applications.

Key Features

  • High Voltage Tolerance: With a drain-source voltage (V<sub>DS) of 600V, the STD18N60M6 can handle high voltage applications, providing reliable performance in demanding conditions.
  • Low On-Resistance: The device boasts an exceptionally low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved efficiency in power conversion systems.
  • High dv/dt Capability: The MOSFET's high dv/dt rating ensures robustness against fast voltage transients, making it ideal for fast-switching applications.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) minimizes switching losses and enables faster switching speeds, contributing to overall system efficiency.
  • Zener-protected Gate: The inclusion of a Zener diode between gate and source enhances the device's robustness by providing protection against electrostatic discharge (ESD).

Applications

The STD18N60M6 is versatile and can be used in a variety of power applications including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Motor Control
  • Power Factor Correction (PFC) Circuits

Quality and Reliability

STMicroelectronics ensures that the STD18N60M6, like all of its products, meets the highest quality and reliability standards. The device is subjected to rigorous testing and validation processes, guaranteeing its performance in even the most challenging environments. With its advanced technology and dependable performance, the STD18N60M6 is an excellent choice for designers looking to enhance the efficiency and reliability of their power systems.

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Shipping Information

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