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STD2LN60K3

Part No STD2LN60K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 235pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102870-STD2LN60K3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD2LN60K3 CAD Model

Description

The STD2LN60K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed to deliver efficient power management and conversion in a wide range of applications, including switch-mode power supplies, power management systems, and motor control circuits. Its advanced technology ensures superior on-state resistance, high switching performance, and reliability.

Key Features:

  • Low On-Resistance: The STD2LN60K3 boasts a very low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: With its ability to handle significant current levels, this MOSFET is suitable for high-power applications.
  • Fast Switching Speed: The device's fast switching speed enables efficient operation at high frequencies, which is crucial for reducing energy waste in power conversion systems.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring robustness and reliability under harsh conditions.
  • Low Gate Charge: The MOSFET features a low gate charge (Q<sub>g), which reduces the power needed to turn the device on and off, thereby saving energy.
  • Enhanced Thermal Performance: Thanks to its optimized package, the STD2LN60K3 offers excellent thermal performance, ensuring stability even at high operating temperatures.

Applications:

  • Switch-mode power supplies (SMPS)
  • DC-to-AC inverters
  • DC-to-DC converters
  • Motor control circuits
  • Power management systems

The STD2LN60K3 is encapsulated in a surface-mount DPAK package, which is not only space-efficient but also facilitates better heat dissipation. The combination of its compact size and exceptional performance makes it an ideal choice for designers looking to optimize their power circuitry in both industrial and consumer electronics.

With STMicroelectronics' commitment to quality and innovation, the STD2LN60K3 stands out as a reliable and efficient solution for advanced power management and control applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3882 $50.4660
315+ $0.3186 $100.3590
490+ $0.3086 $151.2140
670+ $0.2987 $200.1290
870+ $0.2887 $251.1690
1,160+ $0.2588 $300.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,250 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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