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Same model may have multiple batches, images only for reference.
IXFK24N100 Real Image
Same model may have multiple batches, images only for reference.

IXFK24N100

Part No IXFK24N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description HiPerRF Power MOSFETs
Datasheet
IXFK24N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series HiPerFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs 267nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8700pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 560W (Tc)
Rds On (Maximum) @ Id, Vgs 390 mOhm @ 12A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264AA (IXFK)
Package TO-264-3, TO-264AA
Win Source Part Number 1191086-IXFK24N100
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Family Name IXFK24N100
Introduction Date October 09, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXFK24N100 CAD Model

Description

The IXYS 553538 is an N-Channel MOSFET that is designed to handle continuous drain current up to 24A and drain-source breakdown voltage up to 1000V. IXYS manufactures this product.

  • Channel Type: N-Channel
  • Continuous Drain Current: Up to 24A
  • Drain-Source Breakdown Voltage: Up to 1000V
  • On Resistance: 390 mOhm @ 12A and 10V gate-source voltage
  • Input Voltage: 10V
  • Maximum Power Dissipation: 560W (Tc)
  • Package: TO-264-3 or TO-264AA
  • Mounting: Through-Hole
  • Applications: Power Supplies, Motor Control, and Inverters

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4+ $28.6568 $114.6272
6+ $27.7612 $166.5672
8+ $26.8657 $214.9256
10+ $25.9702 $259.7020
13+ $23.2836 $302.6868
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