STD38NH02LT4-TR/E - STMicroelectronics

The STD38NH02LT4-TR/E is a state-of-the-art N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This high-performance transistor is designed to meet the demanding requirements of modern electronic circuits, offering a perfect balance between efficiency and reliability. With its compact footprint and surface-mount DPAK (TO-252) package, the STD38NH02LT4-TR/E is an ideal choice for space-constrained applications.

Boasting a drain-source voltage (V<sub>DS) of 24V and a continuous drain current (I<sub>D) of up to 38A, this power MOSFET can handle significant power levels, making it suitable for a wide range of applications, from power management to switching applications. Its low on-resistance (R<sub>DS(on)) of just 0.022 ohms at V<sub>GS = 10V ensures high efficiency and reduced power losses during operation, which is critical for energy-sensitive designs.

The STD38NH02LT4-TR/E is characterized by its logic level drive, which allows it to be driven directly by microcontrollers and other logic devices without the need for additional driver circuits. This feature simplifies design and reduces component count, leading to cost savings and a more straightforward manufacturing process.

Furthermore, the device is equipped with robust protection features. It includes an integrated diode for fast switching and protection against reverse voltage, ensuring the longevity and durability of the MOSFET under harsh operating conditions. The STD38NH02LT4-TR/E is also characterized by its low threshold voltage, which contributes to its ease of use in various circuit configurations.

As with all STMicroelectronics products, the STD38NH02LT4-TR/E is manufactured with a commitment to quality and environmental sustainability. It is compliant with RoHS and adheres to the highest industry standards for environmental responsibility and performance.

In summary, the STD38NH02LT4-TR/E from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an excellent choice for designers seeking a robust N-channel MOSFET for their power management and switching needs.