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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 800 V 2.5A (Tc) 60W (Tc) Surface Mount DPAK
Manufacturer STMicroelectronics
Series SuperMESH5™
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package DPAK
Family Name STD3N80
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14267-6, STD3N80K5-ND, 497-14267-2, 497-14267-1, 2266-STD3N80K5
Quantity per package 2500
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897919-STD3N80K5
Ultra Librarian 3D Model Ultra Librarian STD3N80K5 CAD Model

Description

STD3N80K5 - N-channel 800 V, 2.3 Ω typ., 2.8 A SuperMESH™5 Power MOSFET in a DPAK package

The STD3N80K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed with the advanced SuperMESH™5 technology. This MOSFET is packaged in a surface-mount DPAK, which is known for its compact footprint and excellent thermal performance. The STD3N80K5 is specifically engineered to deliver high efficiency and reliability for a wide range of power applications.

With a drain-source voltage of 800 V, the STD3N80K5 is well-suited for high-voltage applications that require efficient power conversion. The MOSFET features a low on-resistance of 2.3 Ω typical, which minimizes conduction losses and enhances overall system efficiency. Additionally, the device can handle a continuous drain current of up to 2.8 A, making it capable of driving moderate loads with ease.

The SuperMESH™5 technology incorporates a unique patented structure that combines the benefits of reduced on-resistance, reduced gate charge, and enhanced dv/dt capability. This results in a product that is optimized for significant energy savings in power supply applications, such as switched-mode power supplies, LED lighting, and adapters. The high dv/dt capability ensures robustness and reliability, even under harsh switching conditions.

The STD3N80K5 also features Zener-protected gate, which provides an extra layer of protection against overvoltage conditions. This is particularly useful in preventing gate oxide damage and ensuring the longevity of the device. Moreover, the MOSFET is 100% avalanche tested, which guarantees safe operation during extreme conditions.

For design engineers, the STD3N80K5 offers a solution that is easy to integrate into various circuit designs due to its industry-standard DPAK package. Its exceptional performance characteristics make it an ideal choice for power applications that demand high efficiency, reliability, and thermal management.

Overall, the STD3N80K5 from STMicroelectronics represents a blend of cutting-edge technology and robust design, aimed at delivering superior performance for a range of demanding power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6389 $51.1120
195+ $0.5242 $102.2190
300+ $0.5079 $152.3700
410+ $0.4915 $201.5150
530+ $0.4751 $251.8030
705+ $0.4260 $300.3300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 75,000 pieces
MOQ: 80 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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