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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1250pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066332-STF10N62K3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF10N62K3 CAD Model

Description

STF10N62K3 - High-Efficiency N-Channel MOSFET by STMicroelectronics

The STF10N62K3 is a state-of-the-art N-channel MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is a part of ST's STripFET™ K3 series, which is renowned for its low on-resistance and low gate charge, making it an ideal choice for high-efficiency power management applications.

The STF10N62K3 operates at 620V, making it suitable for high voltage applications, and it is capable of handling continuous drain currents up to 10A. This robust component is designed with an advanced MDmesh™ K3 technology that combines excellent RDS(on) per area with reduced gate charge, ensuring high switching efficiency and reduced power losses.

With a threshold voltage designed to optimize on-state resistance and maintain low gate drive power losses, the STF10N62K3 is perfect for a range of applications, including high-efficiency converters, switching power supplies, and power management systems. It is also widely used in lighting applications, specifically in LED drivers where efficiency and reliability are critical.

The STF10N62K3 comes in a fully isolated TO-220FP package, providing excellent thermal performance and simplifying the assembly process as it does not require insulating mounts or spacers. This feature is particularly beneficial in applications where space is at a premium and thermal management is crucial.

Key features of the STF10N62K3 include:

  • Low threshold drive
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Reduced gate drive requirements
  • High application flexibility
  • Compliance with the European Union directives RoHS (Restriction of Hazardous Substances)

STMicroelectronics provides comprehensive technical support for the STF10N62K3, including detailed datasheets, application notes, and simulation models to assist designers in integrating this component into their designs. With its outstanding performance and reliability, the STF10N62K3 is an excellent choice for designers looking to enhance the efficiency and longevity of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6812 $51.0900
180+ $0.5590 $100.6200
280+ $0.5415 $151.6200
385+ $0.5240 $201.7400
495+ $0.5066 $250.7670
665+ $0.4542 $302.0430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 8,617 pieces
MOQ: 75 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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