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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 6.4nC @ 10V
Max Input Capacitance 340pF @ 48V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102938-STF10P6F6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STF10P6F6 CAD Model

Description

STF10P6F6 - STMicroelectronics Power MOSFET

The STF10P6F6 is a state-of-the-art Power MOSFET device designed and manufactured by STMicroelectronics, a global semiconductor leader renowned for its innovative and high-performance components. This product is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, which is optimized for a wide range of power applications that require both high efficiency and reliability.

With a drain-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -10A, the STF10P6F6 is a robust component suitable for high-performance power switching applications. The device offers an extremely low on-state resistance (R<sub>DS(on)) of just 0.019 Ohm, which significantly reduces conduction losses and improves overall system efficiency.

The STF10P6F6 comes in a surface-mount TO-220FP package, which is widely used in the industry and compatible with various PCB design standards. This makes the integration of the MOSFET into existing designs straightforward, reducing time to market for new products. The package is also designed for optimal heat dissipation, ensuring the MOSFET operates within its specified temperature range even under high load conditions.

One of the key features of the STF10P6F6 is its enhanced gate charge (Q<sub>g) and gate resistance (R<sub>g) parameters, which result in reduced switching losses. This makes the MOSFET ideal for applications such as DC/DC converters, motor drives, and other power management circuits where efficiency is a critical factor.

Moreover, the device is characterized by a threshold voltage (V<sub>th) that ensures low gate drive loss, further contributing to the component's overall energy efficiency. With a 100% avalanche tested guarantee, the STF10P6F6 provides additional reliability and peace of mind for designers when implementing it in applications that may experience challenging conditions.

In summary, the STF10P6F6 Power MOSFET from STMicroelectronics is a high-quality, efficient, and reliable component suited for a variety of power applications. Its advanced technology and robust design ensure optimal performance and ease of integration, making it an excellent choice for engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9108 $57.3240
63+ $1.7899 $112.7637
98+ $1.7294 $169.4812
140+ $1.6084 $225.1760
181+ $1.5480 $280.1880
226+ $1.4876 $336.1976
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 34,300 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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