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STF13NM60ND

Part No STF13NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 24.5nC @ 10V
Max Input Capacitance 845pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102947-STF13NM60ND
Family Name STF13NM60ND
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF13NM60ND CAD Model

Description

STF13NM60ND Power MOSFET by STMicroelectronics

The STF13NM60ND is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance MOSFET is part of STMicroelectronics' MDmesh™ ND5 series, which is renowned for its excellent efficiency and thermal performance. The STF13NM60ND is specifically engineered to address the demanding requirements of a wide range of power applications, including switch-mode power supplies (SMPS), lighting, welding, and other high-efficiency converters.

Key Features

  • High Voltage Capability: The STF13NM60ND can handle up to 600V, making it suitable for applications requiring high voltage operation.
  • Low On-Resistance: With a low RDS(on), this MOSFET ensures minimal power loss and improved efficiency, which is critical for power management applications.
  • Fast Switching Speed: The device's fast switching characteristics enable high-frequency operation, reducing the size of passive components and improving power density.
  • 100% Avalanche Tested: Each unit is thoroughly tested for avalanche ruggedness, ensuring reliability and robustness under harsh conditions.
  • Zener-Protected: The built-in Zener diode provides gate-source protection, enhancing the MOSFET's resilience to voltage spikes and transients.

Applications

The STF13NM60ND is versatile and can be used in various applications, including:

  • Switch-mode power supplies (SMPS)
  • LED lighting drivers
  • DC-DC converters
  • AC-DC adapters and chargers
  • Welding equipment
  • Power factor correction circuits

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 11A Power Dissipation (P<sub>D) 125W Operating Temperature Range -55°C to +150°C

Overall, the STF13NM60ND represents STMicroelectronics' commitment to providing high-quality, reliable power MOSFETs for advanced electronic systems. Its combination of high voltage capability, low on-resistance, and fast switching speeds make it an excellent choice for designers looking to optimize their power circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3782 $52.5384
28+ $3.5924 $100.5872
44+ $3.4802 $153.1288
60+ $3.3679 $202.0740
77+ $3.2556 $250.6812
103+ $2.9188 $300.6364
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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