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STF15NM65N

Part No STF15NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 33.3nC @ 10V
Max Input Capacitance 983pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 091040-STF15NM65N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF15NM65N CAD Model

Description

STF15NM65N - Power MOSFET by STMicroelectronics

The STF15NM65N is a cutting-edge power MOSFET device engineered by STMicroelectronics, a leader in semiconductor technology. This product is designed to meet the high demands of power efficiency and energy saving in a wide range of applications, including switch-mode power supplies, lighting, DC-AC converters, and motor control systems.

The STF15NM65N is part of the MDmesh™ M6 series, which utilizes a revolutionary vertical structure. This design enables the MOSFET to achieve very low on-resistance and gate charge, leading to superior switching performance and improved overall efficiency. The device boasts a maximum continuous drain current of 11 A, making it suitable for handling significant power levels in a compact form factor.

With a drain-source voltage (V<sub>DS) of 650V, the STF15NM65N ensures a wide margin of safety for applications that experience high voltage transients. This high voltage capability, combined with a low threshold voltage, means the MOSFET can operate efficiently at lower gate voltages, reducing power consumption and heat generation.

The STF15NM65N also features a 100% avalanche tested design, which guarantees robustness and reliability in harsh conditions. This makes it an excellent choice for industrial and automotive environments where electrical components are subjected to high stress. Moreover, the device is compliant with the stringent RoHS and Halogen-Free standards, ensuring an environmentally friendly solution.

The package of the STF15NM65N is TO-220FP, a widely used and reliable package that offers good thermal performance and is easy to mount on various types of PCBs. This package, combined with the low thermal resistance of the MOSFET, ensures efficient heat dissipation, further enhancing the longevity and stability of the device.

In conclusion, the STF15NM65N from STMicroelectronics represents a state-of-the-art solution for designers looking to optimize power efficiency and reliability in their electronic systems. With its advanced technology, robust performance, and environmental compliance, this power MOSFET is poised to be a key component in the next generation of energy-efficient electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
28+ $1.8396 $51.5088
59+ $1.7232 $101.6688
91+ $1.6650 $151.5150
130+ $1.5486 $201.3180
168+ $1.4904 $250.3872
210+ $1.4321 $300.7410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 28 pcs
Order Increment : 1 pcs
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