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Same model may have multiple batches, images only for reference.
SI6926AEDQ-T1-E3
Same model may have multiple batches, images only for reference.

SI6926AEDQ-T1-E3

Part No SI6926AEDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TSSOP
Continuous Drain Current (ID) 4.1 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 30 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Dual
Fall Time 800 ns
Gate to Source Voltage (Vgs) 14 V
Max Operating Temperature 150 °C
Max Power Dissipation 830 mW
Min Operating Temperature -55 °C
Power Dissipation 830 mW
Rise Time 800 ns
RoHS Compliant
Turn-Off Delay Time 500 ns
Win Source Part Number 1127870-SI6926AEDQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6926AEDQ-T1-E3 CAD Model

Description

The 1127870-SI6926AEDQ-T1-E3 is a MOSFET from Vishay that has a drain to source voltage (Vdss) of 20 V and a power dissipation of 830 mW.

  • Drain to Source Voltage (Vdss): 20 V
  • Power Dissipation: 830 mW
  • Rise Time and Fall Time: 800 ns
  • Category: Transistors - FETs, MOSFETs - RF
  • Package: TSSOP
  • RoHS Compliant: Yes
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Minimum Operating Temperature: -55 °C
  • Maximum Operating Temperature: 150 °C
  • Continuous Drain Current (ID): 4.1 A
  • Drain to Source Breakdown Voltage: 20 V
  • Turn-Off Delay Time: 500 ns
  • Drain to Source Resistance: 30 mΩ
  • Gate to Source Voltage (Vgs): 14 V

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