STF7N95K3 - N-channel 950 V, 1.7 Ω typ., 7 A SuperMESH™3 Power MOSFET in a TO-220FP package
The STF7N95K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is part of their SuperMESH™3 series, which is renowned for its excellent efficiency in high-voltage applications. The STF7N95K3 is designed to operate at a drain-source voltage of 950 V, making it suitable for a variety of power conversion and switching applications.
With an on-resistance (R<sub>DS(on)) of just 1.7 Ω (typical) and a continuous drain current (I<sub>D) of 7 A, the STF7N95K3 is optimized for high-performance operations. This Power MOSFET is encapsulated in a TO-220FP package, which is recognized for its ability to handle higher power levels and provide excellent thermal performance, ensuring reliability and longevity even under stressful conditions.
The SuperMESH™3 technology integrates a novel vertical structure and a proprietary edge termination scheme, enabling the device to achieve low on-resistance and gate charge (Q<sub>g), which significantly reduces conduction and switching losses. These features make the STF7N95K3 an ideal choice for applications such as switch-mode power supplies (SMPS), lighting, welding, motor control, and other high-efficiency power management systems.
Moreover, the STF7N95K3 boasts an improved dv/dt capability, ensuring better EMI performance and higher reliability when subjected to high-voltage transients. The device also includes Zener-protected gate, which protects against electrostatic discharges and provides an additional layer of safety during handling and operation.
In summary, the STF7N95K3 from STMicroelectronics is a robust and efficient solution for designers looking to enhance power density and efficiency in their applications. Its combination of high voltage rating, low on-resistance, and advanced technology makes it a standout component in the field of power electronics.
