EN
  • EN
  • DE

STF11NM60N

Part No STF11NM60N
Manufacturer STMicroelectronics
Catalog FETs - Single
Description N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET | MOSFET N-CH 600V 10A TO-220FP
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 10A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 450mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 31nC at 10V
Gate Source Voltage (Maximum) ±25V
Input Capacitance (Ciss) (Maximum) at Vds 850pF at 50V
Power Dissipation (Maximum) 25W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220FP
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1260931-STF11NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF11NM60N CAD Model

Description

STF11NM60N - N-channel 600 V, 0.38 ohm, 11 A MDmesh™ II Plus Low Qg Power MOSFET

The STF11NM60N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, designed specifically for high-efficiency power conversion applications. This device is part of the MDmesh™ II Plus series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), making it an ideal choice for a wide range of electronic circuits, including switching power supplies, lighting applications, and power management solutions.

Constructed with STMicroelectronics' innovative MDmesh™ II Plus technology, the STF11NM60N MOSFET features a drain-source voltage (V<sub>DS) of 600 V, which allows it to handle high voltage levels with ease. This characteristic is particularly beneficial in applications where high voltage operation is essential. The device's on-resistance is remarkably low at just 0.38 ohms, ensuring efficient power handling and reduced heat dissipation during operation.

With a continuous drain current (I<sub>D) of 11 A, the STF11NM60N is capable of driving significant current, making it suitable for demanding applications that require robust current handling capabilities. Additionally, its low gate charge enhances the MOSFET's switching performance, which is critical for reducing switching losses and improving overall system efficiency.

The STF11NM60N comes in a TO-220FP package, which provides a good balance between thermal performance and compactness. This package is widely used in the industry and is well-suited for through-hole mounting, making it easy to integrate into various circuit designs.

Key features of the STF11NM60N include:

  • Low threshold drive
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • Zener-protected

Overall, the STF11NM60N from STMicroelectronics is a robust and reliable MOSFET choice for designers looking to optimize power efficiency and thermal management in their electronic designs. Its combination of high voltage capacity, low on-resistance, and efficient switching characteristics make it a versatile component for a variety of power conversion applications.

You May Also Be Interested in

Littelfuse Inc.
MOSFET N-CH 250V 80A TO3P
Lowest to $27.2727
Rohm Semiconductor
MOSFET N-CH 100V 30A LPTS
Lowest to $1.9090
EPC
GANFET N-CH 100V 6A DIE OUTLINE
Lowest to $2.1546
Littelfuse Inc.
MOSFET P-CH -100V -210A TO-264
Lowest to $33.4684
Littelfuse Inc.
MOSFET P-CH 85V 96A TO263
Lowest to $6.5951
Infineon Technologies
MOSFET N-CH 25V 40A/100A TDSON
Lowest to $1.6042
Littelfuse Inc.
MOSFET N-CH 1200V 6A TO268
Lowest to $13.9285
Nexperia USA Inc.
MOSFET N-CH 60V 380MA DFN1006-3
Lowest to $0.0951
Littelfuse Inc.
MOSFET N-CH 300V 94A TO268
Lowest to $40.9090

Top Sellers

Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.3955
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $32.0752
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Lowest to $17.6608
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $14.2557
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $6.1775
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.8016
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.9895
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $21.9925
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $19.3374
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess