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STGB19NC60WT4

Part No STGB19NC60WT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 40A 130W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 12A
Maximum Power Dissipation 130W
Total Switching Energy(Ets) 81μJ (on), 125μJ (off)
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 25ns/90ns
Testing Conditions 390V, 12A, 10 Ohm, 15V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1103001-STGB19NC60WT4
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian STGB19NC60WT4 CAD Model

Description

Product Overview: STGB19NC60WT4 from STMicroelectronics

The STGB19NC60WT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is part of the company's advanced PowerMESH™ lineup, which is renowned for its exceptional efficiency and reliability in power management applications.

The STGB19NC60WT4 is characterized by its 600V collector-emitter breakdown voltage and a collector current rating of 31A at 25°C. This allows for robust performance in high-voltage and high-current environments, making it suitable for a wide range of power applications including motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

One of the key features of this IGBT is its very low on-state voltage drop (Vce(sat)) of typically 1.85V, which contributes to its high efficiency by minimizing conduction losses. Additionally, the device boasts a fast switching speed with low turn-off energy, further enhancing its overall performance and energy efficiency.

The STGB19NC60WT4 is also designed with co-packaged freewheeling diodes, which provide protection against reverse voltage and reduce the need for external components. This integration simplifies the circuit design and can help reduce system size and cost.

The device is housed in a D2PAK package, which offers a compact footprint while still ensuring good thermal performance. This package is suitable for surface mount technology (SMT), which is beneficial for automated assembly processes and helps in designing more streamlined and space-efficient systems.

STMicroelectronics has also ensured that the STGB19NC60WT4 meets stringent quality and reliability standards. The IGBT is designed to operate over a wide temperature range, maintaining its performance even under harsh conditions. Moreover, the device is RoHS compliant, reflecting STMicroelectronics' commitment to environmental sustainability.

In summary, the STGB19NC60WT4 from STMicroelectronics is a state-of-the-art IGBT that offers a blend of high power efficiency, fast switching, and robustness, making it an ideal choice for designers looking to create high-performance power conversion systems.

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