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STGF30H60DF

Part No STGF30H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance | IGBT 600V 60A 37W TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 30A
Maximum Power 37W
Switching Energy 350μJ (on), 400μJ (off)
Input Type Standard
Gate Charge 105nC
Td (on/off) at 25°C 50ns/160ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 110ns
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-220-3 Full Pack
Supplier Device Package TO-220FP
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1261024-STGF30H60DF
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGF30H60DF CAD Model

Description

STGF30H60DF - IGBT from STMicroelectronics

The STGF30H60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) engineered by STMicroelectronics, a leader in semiconductor solutions. This high-speed IGBT is designed to deliver exceptional performance in a wide range of applications, particularly excelling in high-efficiency converters and energy-saving systems.

Key Features

      
  • High Current Rating: With a collector current capability of 30A, the STGF30H60DF can handle significant power levels, making it suitable for demanding applications.
  •   
  • High Voltage Tolerance: The device is rated for a collector-emitter voltage of 600V, providing a comfortable margin for high-voltage operations and ensuring reliability under various conditions.
  •   
  • Low On-State Voltage Drop (VCE(sat)): The low on-state voltage drop minimizes conduction losses and improves overall efficiency, which is critical for energy-sensitive designs.
  •   
  • Fast Switching Speed: The IGBT is optimized for fast switching, reducing switching losses and enabling high-frequency operation.
  •   
  • Co-Packaged Freewheeling Diode: The inclusion of a co-packaged fast recovery diode ensures efficient freewheeling and reverse recovery, which is essential for AC/DC converters and other power applications.

Applications

The versatility of the STGF30H60DF makes it an ideal choice for a broad spectrum of applications, including:

      
  • Power supply units
  •   
  • Motor drives
  •   
  • Power factor correction circuits
  •   
  • Induction heating
  •   
  • Uninterruptible power supplies (UPS)
  •   
  • Welding equipment

Advanced Technology

STMicroelectronics has integrated their advanced trench gate field-stop technology into the STGF30H60DF, which significantly enhances the device's performance by offering lower on-state voltage, higher current density, and reduced switching energies. This technology makes the IGBT an excellent choice for designs where efficiency and thermal management are critical.

Robust Design

The STGF30H60DF is encapsulated in a TO-220FP package, known for its robustness and excellent thermal characteristics. The package ensures that the device can operate reliably even in harsh environments, and it simplifies the heat sinking process, essential for maintaining the IGBT's longevity.

Overall, the STGF30H60DF from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it a top-tier component for power electronics designers and engineers looking to optimize their systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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