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STGFW80V60F

Part No STGFW80V60F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance | IGBT 600V 120A 79W TO-3PF
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 120A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) at Vge, Ic 2.3V at 15V, 80A
Maximum Power 79W
Switching Energy 1.8mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 448nC
Td (on/off) at 25°C 60ns/220ns
Test Condition 400V, 80A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1261026-STGFW80V60F
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGFW80V60F CAD Model

Description

The STGFW80V60F is a high-performance Field-Stop Trench IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics. This IGBT combines the efficiency of MOSFETs with the high current and low saturation voltage of bipolar transistors by integrating a field-stop layer to provide an optimal trade-off between switching performance and on-state behavior, making it suitable for a wide range of high power switching applications.

Key Features

  • Voltage Rating: The STGFW80V60F is rated for a maximum collector-emitter voltage of 600V, making it suitable for applications requiring high voltage operation.
  • Current Capacity: This IGBT is capable of conducting up to 80A of continuous collector current (I<sub>C), ensuring robust performance for high power applications.
  • Low On-State Voltage: The device features a low on-state voltage drop (V<sub>CE(sat)) to minimize conduction losses and improve efficiency.
  • Fast Switching Speed: The fast switching characteristics of the STGFW80V60F reduce switching losses and enable high-frequency operation.
  • High Switching Efficiency: With its trench gate field-stop structure, the IGBT offers superior switching performance and high efficiency, which is critical for energy-saving in power applications.
  • Co-Packaged Diode: The device includes a soft recovery anti-parallel diode, which is co-packaged with the IGBT, further simplifying design and reducing component count.

Applications

The STGFW80V60F is designed for a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Inductive heating
  • Motor drives
  • Power factor correction circuits
  • Solar inverters
  • And other high-performance power conversion systems.

Reliability and Quality

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGFW80V60F IGBT is no exception, offering excellent thermal performance and long-term reliability for demanding power applications.

In conclusion, the STGFW80V60F from STMicroelectronics is an ideal choice for designers looking to optimize their power systems with an IGBT that offers high efficiency, fast switching, and robust performance in a compact package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.0788 $60.7880
24+ $4.9873 $119.6952
36+ $4.8314 $173.9304
50+ $4.6754 $233.7700
64+ $4.5195 $289.2480
86+ $4.0529 $348.5494
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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