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STGW30N120KD

Part No STGW30N120KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 1200V 60A 220W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 60A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 3.85V @ 15V, 20A
Maximum Power Dissipation 220W
Total Switching Energy(Ets) 2.4mJ (on), 4.3mJ (off)
Input Type Standard
Gate Charge 105nC
Turn-on and Turn-off delay time 36ns/251ns
Testing Conditions 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 84ns
Temperature Range - Operating -55°C to 125°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 042920-STGW30N120KD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW30N120KD CAD Model

Description

STGW30N120KD - High-Speed IGBT from STMicroelectronics

The STGW30N120KD is a state-of-the-art high-speed Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This advanced power semiconductor device is designed to cater to a wide range of high-efficiency applications, particularly in power conversion and control systems. With its robust and innovative features, the STGW30N120KD is an ideal choice for designers looking to enhance system performance while maintaining energy efficiency.

Key Features:

  • High Rated Voltage: The device boasts a high breakdown voltage of 1200 V, making it suitable for applications that require high voltage operation and providing a generous safety margin for transient conditions.
  • High Current Capability: With a continuous collector current rating of 30 A, the STGW30N120KD can handle significant power levels, making it a versatile choice for a variety of demanding applications.
  • Low On-State Voltage Drop (VCE(sat)): The low on-state voltage drop minimizes conduction losses and improves overall efficiency, which is crucial for power-sensitive designs.
  • High-Speed Switching: The device features fast switching characteristics, which reduces switching losses and allows for higher frequency operation in converters and inverters.
  • Short-Circuit Rating: It comes with a short-circuit withstand time of 10 µs, providing robustness and reliability in the event of a fault condition.
  • Co-Packaged Diode: The inclusion of a soft recovery anti-parallel diode further enhances the performance during the freewheeling phase of operation.

Applications:

The STGW30N120KD is suitable for a wide array of high-performance applications, including:

  • Uninterruptible Power Supplies (UPS)
  • High-frequency induction heating
  • Power factor correction circuits
  • Welding equipment
  • Solar inverters
  • Electric vehicle charging stations

With its combination of high-speed switching, high voltage and current ratings, and energy-efficient operation, the STGW30N120KD is engineered to meet the stringent requirements of modern power electronic systems. Whether it's for industrial motor drives, renewable energy systems, or advanced power supplies, this IGBT from STMicroelectronics is designed to deliver top-notch performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.5853 $58.7559
8+ $16.0707 $128.5656
12+ $15.5682 $186.8184
16+ $15.0658 $241.0528
20+ $14.5634 $291.2680
27+ $13.0573 $352.5471
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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