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STGWT30HP65FB

Part No STGWT30HP65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT TRENCH 650V 60A TO3P  /  IGBT Trench Field Stop 650 V 60 A 260 W Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 260 W
Switching Energy 293µJ (off)
Input Type Standard
Gate Charge 149 nC
Td (on/off) @ 25°C -/146ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Base Product Number STGWT30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 600
Win Source Part Number 1108222-STGWT30HP65FB
Ultra Librarian 3D Model Ultra Librarian STGWT30HP65FB CAD Model

Description

STGWT30HP65FB - High-Efficiency IGBT from STMicroelectronics

The STGWT30HP65FB is a cutting-edge insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This high-performance IGBT is designed to cater to a wide range of power applications, particularly those requiring high efficiency and reliability. With its advanced trench gate field-stop technology, the STGWT30HP65FB provides an optimal blend of low conduction and switching losses, making it an excellent choice for energy-conscious designs.

Key Features

  • Voltage Rating: The device is rated for a maximum collector-emitter voltage of 650V, which is suitable for applications with high voltage requirements.
  • Current Rating: It can handle a continuous collector current of 30A at 25°C, ensuring robust performance for a variety of power-intensive tasks.
  • High Switching Speed: The IGBT boasts a fast switching speed, which is crucial for reducing energy losses during power conversion processes.
  • Low Saturation Voltage: The low on-state collector-emitter saturation voltage (V<sub>CE(sat)) minimizes conduction losses and improves overall efficiency.
  • Co-Packaged Diode: A co-packaged ultrafast soft recovery anti-parallel diode further enhances the performance by providing efficient freewheeling and clamping operations.

Applications

The STGWT30HP65FB is versatile and can be used in a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Induction Heating Systems
  • Solar Inverters
  • High-Performance Drives

Enhanced Reliability

Reliability is a hallmark of STMicroelectronics' products, and the STGWT30HP65FB is no exception. It is engineered to withstand rugged environmental conditions and is characterized by its robustness and long operational life. With its maximum junction temperature of 175°C, it ensures stable performance even under thermal stress.

In summary, the STGWT30HP65FB from STMicroelectronics is an exceptional IGBT that offers a combination of high efficiency, fast switching, and reliability, making it an ideal choice for engineers and designers looking to improve the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7964 $51.7660
135+ $0.7460 $100.7100
210+ $0.7208 $151.3680
300+ $0.6704 $201.1200
390+ $0.6452 $251.6280
485+ $0.6200 $300.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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