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Same model may have multiple batches, images only for reference.
IRG4IBC30KD Real Image
Same model may have multiple batches, images only for reference.

IRG4IBC30KD

Part No IRG4IBC30KD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 17A 45W TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 17A
Current - Collector Pulsed (Icm) 34A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 16A
Maximum Power 45W
Switching Energy 600μJ (on), 580μJ (off)
Input Type Standard
Gate Charge 67nC
Td (on/off) at 25°C 60ns/160ns
Test Condition 480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3 Full Pack
Supplier Device Package TO-220AB Full-Pak
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188257-IRG4IBC30KD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRG4IBC30KD CAD Model

Description

The Infineon Technologies IGBT is an N-channel transistor with a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 17A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Continuous Collector Current: 17A
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 67nC
  • Switching Energy (On): 600μJ
  • Switching Energy (Off): 580μJ
  • Package: TO-220AB Full-Pak
  • Power Dissipation: 45W
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 50
  • Operating Temperature: -55°C to 150°C

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