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STH320N4F6-2

Part No STH320N4F6-2
Manufacturer STMicroelectronics
Catalog FETs - Single
Description Automotive switching applications | MOSFET N-CH 40V 200A H2PAK-2
Sample
ECAD Module ECAD
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Pricing & Ordering $2.5058 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
13+
$3.8710
$50.323
32+
$3.1760
$101.632
49+
$3.0770
$150.773
68+
$2.9780
$202.504
87+
$2.8790
$250.473
117+
$2.5810
$301.977
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 34,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 200A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.3mOhm at 80A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 240nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 13800pF at 15V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package H2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab) Variant
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261074-STH320N4F6-2
Manufacturer Homepage www.st.com
Popularity Medium
Fake Threat In the Open Market 42 pct.
Supply and Demand Status Limited

Description

STH320N4F6-2 Power MOSFET by STMicroelectronics

The STH320N4F6-2 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative solutions in the electronics space. This MOSFET is part of ST's STripFET F6 series, which is renowned for its low on-state resistance and high switching performance, making it an ideal choice for a wide range of power applications.

With a maximum continuous drain current of 100A and a drain-source voltage of 40V, the STH320N4F6-2 is capable of handling high currents and voltages with ease. This component is designed to deliver high power density and efficiency, which is crucial for modern electronic applications that demand compact yet powerful components.

The device features an ultra-low gate charge (Qg) and low on-resistance (Rds(on)), which ensures reduced conduction and switching losses. These characteristics make the STH320N4F6-2 an excellent choice for applications such as high-efficiency DC/DC converters, motor control circuits, and power management solutions in computing and telecom systems.

Its package is the H2PAK-2, a surface-mount package that allows for efficient thermal dissipation and space-saving on PCBs. The STH320N4F6-2 is also characterized by a threshold voltage (Vth) that is designed to enable a wide range of gate drive voltages, providing flexibility in various circuit designs.

Furthermore, STMicroelectronics has designed the STH320N4F6-2 with robustness in mind. It features a 100% avalanche tested design, which ensures reliability and longevity even under harsh conditions. The device also boasts a low thermal resistance, which contributes to its stability and performance over a wide temperature range.

In summary, the STH320N4F6-2 from STMicroelectronics is a state-of-the-art Power MOSFET that combines high efficiency, reliability, and thermal performance. Its advanced features make it suitable for a multitude of power applications, allowing designers to achieve optimal power management in their electronic systems.

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