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STHS2375AM6F

Part No STHS2375AM6F
Manufacturer STMicroelectronics
Catalog PMIC - Power Over Ethernet (PoE) Controllers
Description IC POE CNTRL 1 CHANNEL 8SO / Power Over Ethernet Controller 1 Channel 802.3af (PoE) 8-SOIC
Sample
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Category Integrated Circuits (ICs)>PMIC - Power Over Ethernet (PoE) Controllers
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
Type Controller (PD)
Number of Channels 1
Power - Max 12.95 W
Internal Switch(s) Yes
Auxiliary Sense No
Standards 802.3af (PoE)
Voltage - Supply 0V ~ 57V
Current - Supply 250µA
Temperature Range - Operating -40°C ~ 85°C
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number STHS2375
Other Names 497-6320-6,497-6320-1,497-6320-2
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.31.0001
Win Source Part Number 1253089-STHS2375AM6F
Ultra Librarian 3D Model Ultra Librarian STHS2375AM6F CAD Model

Description

The STHS2375AM6F is a cutting-edge silicon carbide (SiC) High-Electron-Mobility Transistor (HEMT) developed by STMicroelectronics, a global semiconductor leader. This product is designed to meet the rigorous demands of high-efficiency, high-frequency applications found in modern power electronic systems.

Key Features

  • High-Efficiency SiC Material: The use of silicon carbide as a semiconductor material provides superior thermal performance, reduced energy losses, and increased power density.
  • High Switching Frequency: With its capability to operate at high frequencies, the STHS2375AM6F is ideal for applications where efficiency and fast switching are paramount.
  • Low On-Resistance: The low on-resistance (RDS(on)) characteristic of this HEMT ensures minimal conduction losses, enhancing overall system efficiency.
  • High-Temperature Operation: It is capable of operating at elevated temperatures, making it suitable for harsh environments and reducing the need for extensive cooling systems.
  • Robust Design: The device is engineered to withstand high voltage and current conditions, ensuring reliability and longevity in the field.

Applications

The STHS2375AM6F is versatile and can be used in a variety of applications, including but not limited to:

  • Electric Vehicle (EV) inverters and chargers
  • Renewable energy systems such as solar inverters and wind turbine converters
  • Power supplies for data centers and telecommunication
  • Industrial motor drives and high-performance power converters

Product Summary

STMicroelectronics' STHS2375AM6F represents a significant step forward in power semiconductor technology. With its high-efficiency SiC construction, it stands out as a robust and reliable component for advanced power electronic systems. The HEMT's high switching frequency, low on-resistance, and capability to operate under high-temperature conditions make it an ideal choice for designers looking to optimize their systems for performance and energy efficiency. Whether for transportation, renewable energy, industrial, or telecommunication applications, the STHS2375AM6F delivers the performance and reliability expected from a leader in semiconductor innovation.

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