The STL38DN6F7AG is a cutting-edge power MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This product is part of the STripFET™ VII DeepGATE™ technology range, which is renowned for its low on-state resistance and minimal gate charge, making it highly efficient for a wide array of power applications.

Key Features

• Low Threshold Drive: The STL38DN6F7AG operates at a very low gate threshold voltage, which means it can be driven by low-voltage control signals, enhancing its compatibility with a variety of microcontrollers and other control devices.
• High Efficiency: With an extremely low on-resistance (R<sub>DS(on)) of just 3.8 mΩ max, this MOSFET ensures high efficiency in power conversion, which is crucial for reducing energy consumption and heat generation in electronic devices.
• High Current Capacity: This device can handle continuous drain currents up to 80 A, making it suitable for high-power applications that require robust current handling capabilities.
• Robust Thermal Performance: The STL38DN6F7AG is designed with an excellent thermal resistance, allowing it to maintain performance even under high temperature conditions.
• 100% Avalanche Tested: Ensuring reliability and robustness, this MOSFET has been rigorously tested for avalanche conditions, which means it can withstand high-energy pulses.

Applications

The STL38DN6F7AG is versatile and can be used in a variety of applications, including:

• Power supply units
• DC-DC converters
• Motor drives
• Automotive applications
• High-performance computing
• Switching applications

STMicroelectronics' STL38DN6F7AG is an excellent choice for designers looking for a high-performance, efficient, and reliable power MOSFET. Its advanced technology and robust design make it a key component in pushing the boundaries of power management and conversion in modern electronics.