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STN1N20

Part No STN1N20
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15.7nC @ 10V
Max Input Capacitance 206pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.9W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 107544-STN1N20
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian STN1N20 CAD Model

Description

STN1N20 MOSFET Overview

The STN1N20 is a robust and efficient N-channel MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is designed to handle high-efficiency power management tasks and is particularly suitable for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control circuits, and general-purpose switching applications.

Key Features

  • Low On-Resistance: The STN1N20 boasts an exceptionally low on-resistance (R<sub>DS(on)), which significantly reduces conduction losses and enhances overall efficiency, making it a prime choice for applications where power conservation is critical.
  • High Voltage Capability: With a drain-source voltage (V<sub>DSS) of 200V, this MOSFET can comfortably handle high voltage operations, ensuring reliability and stability in circuits where voltage spikes may occur.
  • Fast Switching Speed: The fast switching performance of the STN1N20 reduces switching losses and improves the efficiency of power conversion in high-frequency circuits.
  • Low Gate Charge: A low gate charge (Q<sub>G) facilitates faster switching and reduces the power required to drive the gate, thus minimizing the total power dissipation of the system.
  • High Thermal Performance: Enhanced thermal characteristics allow this MOSFET to operate reliably even at elevated temperatures, which is essential for maintaining performance in thermally challenging environments.

Applications

  • Switch-Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Drivers
  • Power Management Functions
  • High-Efficiency Switching Applications

The STN1N20 is available in a TO-92 package, which is widely used and favored for its compact size and ease of integration into various circuit designs. Its robustness, combined with STMicroelectronics' commitment to quality and reliability, makes the STN1N20 a highly dependable component for designers and engineers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,691 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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