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Same model may have multiple batches, images only for reference.
TPC8A03-H(TE12LQM)
Same model may have multiple batches, images only for reference.

TPC8A03-H(TE12LQM)

Part No TPC8A03-H(TE12LQM)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 30V 17A 8-PIN Sop T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOP
Continuous Drain Current (ID) 17 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 5.6 mΩ
Drain to Source Voltage (Vdss) 30 V
Fall Time 7.2 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 3.43 nF
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 1.9 W
Radiation Hardening No
Rds On Max 5.6 mΩ
Rise Time 3.6 ns
RoHS Compliant
Win Source Part Number 1100774-TPC8A03-H(TE12LQM)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPC8A03-H(TE12LQM) CAD Model

Description

The Toshiba Semiconductor and Storage 1100774-TPC8A03-H(TE12LQM) is a surface mount MOSFET transistor with drain to source voltage (Vdss) of 30V and continuous drain current (ID) of 17A.

  • Mounting Type: Surface Mount
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (ID): 17A
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Resistance: 5.6 mΩ
  • Rise Time: 3.6 ns
  • Fall Time: 7.2 ns
  • Application: RF applications
  • RoHS Compliant: Yes
  • Maximum Temperature: 150 °C

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