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Same model may have multiple batches, images only for reference.
PHKD3NQ10T,518 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PHKD3NQ10T,518

Part No PHKD3NQ10T,518
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 100V 3A 8SOIC
Datasheet
PHKD3NQ10T,518 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 90 mOhm @ 1.5A, 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 633pF @ 20V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1087816-PHKD3NQ10T,518
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHKD3NQ10T,518 CAD Model

Description

The PHKD3NQ10T,518 is a dual N-channel logic level gate FET manufactured by Nexperia USA Inc.

  • Mounting Type: SMD
  • Category: discrete semiconductor products
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Max Gate Charge: 21nC @ 10V
  • Max Input Capacitance: 633pF @ 20V
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 1.5A, 10V
  • Operating Temperature: -65°C to 150°C (TJ)
  • Package: 8-SO
  • Popularity: medium

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