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Same model may have multiple batches, images only for reference.
TPC8022-H(TE12LQ) Real Image
Same model may have multiple batches, images only for reference.

TPC8022-H(TE12LQ)

Part No TPC8022-H(TE12LQ)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 7.5A SOP8 2-6J1B
Datasheet
TPC8022-H(TE12LQ) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 650pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 3.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 213266-TPC8022-H(TE12LQ)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8022-H(TE12LQ) CAD Model

Description

The Toshiba TPC8022-H(TE12LQ) is an N-channel MOSFET with a maximum power dissipation of 1W @ Ta.

  • Maximum Power Dissipation: 1W @ Ta
  • Maximum Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 7.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 11nC @ 10V
  • Package: 8-SOP
  • Mounting: Surface mountable
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Status: Obsolete (EOL)

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