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Same model may have multiple batches, images only for reference.
SSM3K106TU(TE85L) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K106TU(TE85L)

Part No SSM3K106TU(TE85L)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1.2A UFM
Datasheet
SSM3K106TU(TE85L) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Input Capacitance 36pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 310 mOhm @ 600mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFM
Dimension 3-SMD, Flat Leads
Win Source Part Number 1102292-SSM3K106TU(TE85L)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K106TU(TE85L) CAD Model

Description

This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Polarity Type: N-Channel
  • Power Dissipation (Max): 500mW (Ta)
  • Drive Voltage: 4V (Max Rds On), 10V (Min Rds On)
  • Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)
  • Case/Package Type: UFM
  • Dimension: 3-SMD, Flat Leads
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.2A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 100μA
  • Max Input Capacitance: 36pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 310 mOhm @ 600mA, 10V
  • Supply and Demand Status: Sufficient

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