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Same model may have multiple batches, images only for reference.
RN2906FE(TE85L,F) Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

RN2906FE(TE85L,F)

Part No RN2906FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN2906
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1478706-RN2906FE(TE85L,F)
Ultra Librarian 3D Model Ultra Librarian RN2906FE(TE85L,F) CAD Model

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