The STP13N60M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in the semiconductor industry. This high-performance MOSFET is part of the MDmesh™ M2 series that features advanced technology for achieving excellent RDS(on) per area, reduced on-resistance, and exceptional switching performance.

Key Features

• Voltage Rating: The STP13N60M2 boasts a robust 600V drain-source breakdown voltage, making it suitable for high-voltage applications.
• Current Handling: With a continuous drain current of 13A, this MOSFET can handle significant power for a wide range of electronic applications.
• Low On-Resistance: The device features a low on-resistance of typically 0.29Ω, which ensures high efficiency and minimizes energy losses during operation.
• Fast Switching Speed: Fast switching is a hallmark of the STP13N60M2, which contributes to improved performance in power conversion applications.
• Enhanced dv/dt Capability: The device is engineered to withstand high voltage transients, offering improved reliability in rugged environments.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring robustness and durability under stressful conditions.
• Zener-Protected: The MOSFET is equipped with an integrated Zener diode for gate-source protection, enhancing its resilience against overvoltage events.

Applications

The STP13N60M2 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Motor Control
• Power Management Functions

Package and Quality

The STP13N60M2 is housed in a TO-220 package, which is widely used for power devices due to its excellent thermal and mechanical characteristics. STMicroelectronics ensures the highest quality and reliability of its products, with the STP13N60M2 being no exception. Customers can expect consistent performance and longevity from this premium power MOSFET.