The STP14NM50N is a cutting-edge Power MOSFET device designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance MOSFET is part of ST's MDmesh™ series, which is renowned for its excellent energy efficiency and low power dissipation. The STP14NM50N is specifically engineered to address the demanding needs of high-power applications across various sectors, including consumer electronics, industrial systems, and renewable energy solutions.
Key Features
- High Voltage Capability: The STP14NM50N operates at a drain-source voltage of 500V, making it suitable for high-voltage applications.
- Low On-Resistance: With an on-resistance of just 0.28 ohms, this MOSFET ensures minimal conduction losses and higher efficiency in electronic circuits.
- High Current Rating: The device can sustain a continuous drain current of 14A, allowing it to handle significant power levels.
- Reduced Gate Charge: A low gate charge facilitates faster switching speeds, which is crucial for power conversion and regulation applications.
- 100% Avalanche Tested: Guaranteed reliability and robustness in harsh operating conditions, as each device is rigorously tested for avalanche breakdown resilience.
Applications
The STP14NM50N is designed for versatility and can be used in a variety of applications, including:
- Switch Mode Power Supplies (SMPS)
- High Efficiency DC-DC Converters
- Motor Control Systems
- LED Lighting Solutions
- Power Management Functions
Technical Specifications
| Parameter |
Value |
| Drain-source Voltage (VDS) |
500V |
| Continuous Drain Current (ID) |
14A |
| On-resistance (RDS(on)) |
0.28Ω |
| Gate Charge (Qg) |
Typical value not specified |
| Package |
TO-220 |
Overall, the STP14NM50N from STMicroelectronics exemplifies state-of-the-art power MOSFET technology, offering a blend of high efficiency, robust performance, and versatility, making it an optimal choice for designers seeking to enhance the performance and reliability of their power management systems.